Flexible Neural Electrode Array Based-on Porous Graphene for Cortical Microstimulation and Sensing.

Neural sensing and stimulation have been the backbone of neuroscience research, brain-machine interfaces and clinical neuromodulation therapies for decades. To-date, most of the neural stimulation systems have relied on sharp metal microelectrodes with poor electrochemical properties that induce extensive damage to the tissue and significantly degrade the long-term stability of implantable systems. Here, we demonstrate a flexible cortical microelectrode array based on porous graphene, which is capable of efficient electrophysiological sensing and stimulation from the brain surface, without penetrating into the tissue. Porous graphene electrodes show superior impedance and charge injection characteristics making them ideal for high efficiency cortical sensing and stimulation. They exhibit no physical delamination or degradation even after 1 million biphasic stimulation cycles, confirming high endurance. In in vivo experiments with rodents, same array is used to sense brain activity patterns with high spatio-temporal resolution and to control leg muscles with high-precision electrical stimulation from the cortical surface. Flexible porous graphene array offers a minimally invasive but high efficiency neuromodulation scheme with potential applications in cortical mapping, brain-computer interfaces, treatment of neurological disorders, where high resolution and simultaneous recording and stimulation of neural activity are crucial

Neuroinspired unsupervised learning and pruning with subquantum CBRAM arrays.

Resistive RAM crossbar arrays offer an attractive solution to minimize off-chip data transfer and parallelize on-chip computations for neural networks. Here, we report a hardware/software co-design approach based on low energy subquantum conductive bridging RAM (CBRAM®) devices and a network pruning technique to reduce network level energy consumption. First, we demonstrate low energy subquantum CBRAM devices exhibiting gradual switching characteristics important for implementing weight updates in hardware during unsupervised learning. Then we develop a network pruning algorithm that can be employed during training, different from previous network pruning approaches applied for inference only. Using a 512 kbit subquantum CBRAM array, we experimentally demonstrate high recognition accuracy on the MNIST dataset for digital implementation of unsupervised learning. Our hardware/software co-design approach can pave the way towards resistive memory based neuro-inspired systems that can autonomously learn and process information in power-limited settings

A Soft-Pruning Method Applied During Training of Spiking Neural Networks for In-memory Computing Applications

Inspired from the computational efficiency of the biological brain, spiking neural networks (SNNs) emulate biological neural networks, neural codes, dynamics, and circuitry. SNNs show great potential for the implementation of unsupervised learning using in-memory computing. Here, we report an algorithmic optimization that improves energy efficiency of online learning with SNNs on emerging non-volatile memory (eNVM) devices. We develop a pruning method for SNNs by exploiting the output firing characteristics of neurons. Our pruning method can be applied during network training, which is different from previous approaches in the literature that employ pruning on already-trained networks. This approach prevents unnecessary updates of network parameters during training. This algorithmic optimization can complement the energy efficiency of eNVM technology, which offers a unique in-memory computing platform for the parallelization of neural network operations. Our SNN maintains ~90% classification accuracy on the MNIST dataset with up to ~75% pruning, significantly reducing the number of weight updates. The SNN and pruning scheme developed in this work can pave the way toward applications of eNVM based neuro-inspired systems for energy efficient online learning in low power applications

Brain-like associative learning using a nanoscale non-volatile phase change synaptic device array

Recent advances in neuroscience together with nanoscale electronic device technology have resulted in huge interests in realizing brain-like computing hardwares using emerging nanoscale memory devices as synaptic elements. Although there has been experimental work that demonstrated the operation of nanoscale synaptic element at the single device level, network level studies have been limited to simulations. In this work, we demonstrate, using experiments, array level associative learning using phase change synaptic devices connected in a grid like configuration similar to the organization of the biological brain. Implementing Hebbian learning with phase change memory cells, the synaptic grid was able to store presented patterns and recall missing patterns in an associative brain-like fashion. We found that the system is robust to device variations, and large variations in cell resistance states can be accommodated by increasing the number of training epochs. We illustrated the tradeoff between variation tolerance of the network and the overall energy consumption, and found that energy consumption is decreased significantly for lower variation tolerance.Comment: Original article can be found here: http://journal.frontiersin.org/Journal/10.3389/fnins.2014.00205/abstrac

Multi-level, Forming Free, Bulk Switching Trilayer RRAM for Neuromorphic Computing at the Edge

Resistive memory-based reconfigurable systems constructed by CMOS-RRAM integration hold great promise for low energy and high throughput neuromorphic computing. However, most RRAM technologies relying on filamentary switching suffer from variations and noise leading to computational accuracy loss, increased energy consumption, and overhead by expensive program and verify schemes. Low ON-state resistance of filamentary RRAM devices further increases the energy consumption due to high-current read and write operations, and limits the array size and parallel multiply & accumulate operations. High-forming voltages needed for filamentary RRAM are not compatible with advanced CMOS technology nodes. To address all these challenges, we developed a forming-free and bulk switching RRAM technology based on a trilayer metal-oxide stack. We systematically engineered a trilayer metal-oxide RRAM stack and investigated the switching characteristics of RRAM devices with varying thicknesses and oxygen vacancy distributions across the trilayer to achieve reliable bulk switching without any filament formation. We demonstrated bulk switching operation at megaohm regime with high current nonlinearity and programmed up to 100 levels without compliance current. We developed a neuromorphic compute-in-memory platform based on trilayer bulk RRAM crossbars by combining energy-efficient switched-capacitor voltage sensing circuits with differential encoding of weights to experimentally demonstrate high-accuracy matrix-vector multiplication. We showcased the computational capability of bulk RRAM crossbars by implementing a spiking neural network model for an autonomous navigation/racing task. Our work addresses challenges posed by existing RRAM technologies and paves the way for neuromorphic computing at the edge under strict size, weight, and power constraints

Bioresorbable silicon electronics for transient spatiotemporal mapping of electrical activity from the cerebral cortex.

Bioresorbable silicon electronics technology offers unprecedented opportunities to deploy advanced implantable monitoring systems that eliminate risks, cost and discomfort associated with surgical extraction. Applications include postoperative monitoring and transient physiologic recording after percutaneous or minimally invasive placement of vascular, cardiac, orthopaedic, neural or other devices. We present an embodiment of these materials in both passive and actively addressed arrays of bioresorbable silicon electrodes with multiplexing capabilities, which record in vivo electrophysiological signals from the cortical surface and the subgaleal space. The devices detect normal physiologic and epileptiform activity, both in acute and chronic recordings. Comparative studies show sensor performance comparable to standard clinical systems and reduced tissue reactivity relative to conventional clinical electrocorticography (ECoG) electrodes. This technology offers general applicability in neural interfaces, with additional potential utility in treatment of disorders where transient monitoring and modulation of physiologic function, implant integrity and tissue recovery or regeneration are required

Ge Interface Engineering with Ozone-oxidation for Low Interface State Density

Passivation of Ge has been a critical issue for Ge MOS applications in future technology nodes. In this letter, we introduce ozone-oxidation to engineer Ge/insulator interface. Interface states (D{sub it}) values across the bandgap and close to conduction bandedge were extracted using conductance technique at low temperatures. D{sub it} dependency on growth conditions was studied. Minimum D{sub it} of 3 x 10{sup 11} cm{sup -2} V{sup -1} was demonstrated. Physical quality of the interface was investigated through Ge 3d spectra measurements. We found that the interface and D{sub it} is strongly affected by the distribution of oxidation states and quality of the suboxide